to-220f plastic-encapsulate mosfets CJPF02N65 n-channel power mosfet general description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode an d switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supp lies, converters, power motor controls and bridge circuits. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z tighter v sd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 650 gate-source voltage v gss 20 v continuous drain current i d 2 pulsed drain current i dm 8 a single pulsed avalanche energy (note1) e as 128 mj power dissipation p d 2 w thermal resistance from junction to ambient r ja 62.5 /w operating and storage temperature range t j, t stg -55 ~+150 maximum lead temperure for soldering purposes , 1/8?from case for 5 seconds t l 260 to-220f 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 650 drain-source diode forward voltage(note2) v sd v gs = 0v, i s =2a 1.6 v zero gate voltage drain current i dss v ds =600v, v gs =0v 250 a gate-body leakage curren (note2) i gss v ds =0v, v gs = 20v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =1a 4.4 ? dynamic characteristics (note 3) input capacitance c iss 435 output capacitance c oss 56 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 9.2 pf switching characteristics (note 3) total gate charge q g 5.0 10 gate-source charge q gs 2.7 gate-drain charge q gd v ds =480v,v gs =10v,i d =4.0a 2.0 nc turn-on delay time (note3) t d (on) 12 turn-on rise time (note3) t r 21 turn-off delay time (note3) t d(off) 30 turn-off fall time (note3) t f v dd =300v, v gs =10v, r g =18 ? , i d =2a 24 ns notes : 1. l= 64 mh, i l =2 a, v dd = 5 0v, r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2013
01234567 0.0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 1e-3 0.01 0.1 1 10 24681012 0 5 10 15 20 25 30 01234 0 2 4 6 8 10 0 10203040 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =1a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed CJPF02N65 v gs =5.5v output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2013
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